| PART |
Description |
Maker |
| PTF210451 PTF210451E |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 45 W 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTF080101S PTF080101 |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W 860-960MHZ
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
|
INFINEON[Infineon Technologies AG]
|
| PTF210901 PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTF191601 PTF191601E |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz
LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTF211802A PTF211802E PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz
LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
|
http://
INFINEON[Infineon Technologies AG]
|
| PTFA220081M |
High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz
|
Infineon Technologies AG
|
| 08090 PTF080901 PTF080901E PTF080901F 8090 |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
LDMOS RF Power Field Effect Transistor 90 W 869-960 MHz
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| PTFB183404E PTFB183404F |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|
| MAPLST1900-030CF |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 30W, 26V
|
Tyco Electronics
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
